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 GaAlAs Infrared Emitting Diodes
Flat T-13/4 (5 mm) Plastic Package -- 880 nm
VTE1281F
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 26F T-13/4 (5 mm) FLAT CHIP SIZE: .015" x .015"
This 5 mm diameter plastic packaged emitter has no lens. It is designed to be coupled to plastic fibers or used to illuminate an external lens. It contains a medium area, single wirebonded, GaAlAs 880 nm chip and is designed to be cost effective in moderate pulse drive applications.
ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted)
Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): -40C to 100C 150 mW 2.14 mW/C 100 mA 1.43 mA/C 2.5 A -.8%/C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 A 880 nm 23 pF
260C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also GaAlAs curves, pages 108-110)
Output Irradiance Part Number Ee mW/cm2 Min. VTE1281F 0.16 Typ. 0.21 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 2.1 Total Power PO mW Typ. 20 Test Current IFT mA (Pulsed) 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 Max. 2.0 45 Half Power Beam Angle 1/2
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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